/* $Id: d_mos123.model,v 26.5 2006/11/05 07:19:19 al Exp $ -*- C++ -*-
 * Copyright (C) 2001 Albert Davis
 * Author: Albert Davis <aldavis@ieee.org>
 *
 * This file is part of "Gnucap", the Gnu Circuit Analysis Package
 *
 * This program is free software; you can redistribute it and/or modify
 * it under the terms of the GNU General Public License as published by
 * the Free Software Foundation; either version 2, or (at your option)
 * any later version.
 *
 * This program is distributed in the hope that it will be useful,
 * but WITHOUT ANY WARRANTY; without even the implied warranty of
 * MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE.  See the
 * GNU General Public License for more details.
 *
 * You should have received a copy of the GNU General Public License
 * along with this program; if not, write to the Free Software
 * Foundation, Inc., 51 Franklin Street, Fifth Floor, Boston, MA
 * 02110-1301, USA.
 *------------------------------------------------------------------
 * MOS model - base for levels 1,2,3,6
 */
h_headers {
#include "d_mos_base.h"
  enum gate_t {gtSAME = -1, gtMETAL = 0, gtOPP = 1};
  const double NI = 1.45e16;	/* intrinsic carrier concentration */
}
cc_headers {
}
/*--------------------------------------------------------------------------*/
model MOS123 {
  dev_type MOS;
  inherit MOS_BASE;
  independent {
    override {
      double cjo "" default=0.;
      double pb "" default=0.8;
      double pbsw "" final_default=pb;
      int cmodel "CMODEL" print_test="cmodel!=3"
	calculate="((!cmodel)?3:cmodel)";
    }
    raw_parameters {
      double vto_raw "zero-bias threshold voltage"
	name=VTO default=NA
	print_test="!calc_vto";
      double gamma "bulk threshold parameter"
	name=GAmma default=NA
	print_test="!calc_gamma" calc_print_test="calc_gamma";
      double phi "surface potential"
	name=PHI default=NA positive
	print_test="!calc_phi" calc_print_test="calc_phi";
      double lambda "channel-length modulation"
	name=LAmbda default=NA;
      double tox "oxide thickness"
	name=TOX default=NA positive;
      double nsub_cm "substrate doping"
	name=NSUb default=NA;
      double nss_cm "surface state density"
	name=NSS default=0.0
	print_test="nss_cm != 0.0 || has_hard_value(nsub_cm)";
      double xj "metallurgical junction depth"
	name=XJ default=NA positive;

      double uo_cm "surface mobility" 
	name=UO alt_name=U0 default="600.";
      int tpg "type of gate material - really gate_t"
	name=TPG default="int(gtOPP)";
    }
    calculated_parameters {
      double nsub "" 
	calculate="((nsub_cm.has_value()) ? nsub_cm*ICM2M3 : NA)";
      double nss "" calculate="nss_cm*ICM2M2";
      double uo "" calculate="uo_cm*CM2M2";
      double vto "" name=VTO
	calculate="((vto_raw.has_value()) ? vto_raw * polarity : NA)"
	calc_print_test="calc_vto";
      double cox "oxide capacitance (E_OX / tox)"
	name=COX calc_print_test=true default=NA;
      bool calc_vto "" default=false;
      bool calc_gamma "" default=false;
      bool calc_phi "" default=false;
    }
    code_post {
      if (tpg < 0) {		// coerce tpg to a proper value
	tpg = gtSAME;		
      }else if (tpg > 0) {
	tpg = gtOPP;
      }else{
	assert(tpg == gtMETAL);
      }
      if (has_hard_value(tox) && tox <= 0) {
        untested();
        set_default(&tox, NA);
	error(bWARNING, long_label()+": tox <= 0, treating as if not input\n");
      }
      if (has_hard_value(nsub_cm) && nsub < NI) {
        untested();
        nsub = NA;
	error(bWARNING,long_label()+": nsub < ni, treating as if not input\n");
      }
    }
  }
  size_dependent {
    override {
      double cgate "" calculate="m->cox * w_eff * l_eff";
      double phi "" calculate="m->phi";
    }
  }
}
/*--------------------------------------------------------------------------*/
/*--------------------------------------------------------------------------*/